PART |
Description |
Maker |
KVR133X64C3Q128 KVR133X64C3Q_128 KVR133X64C3Q/128 |
128MB 16M x Bit PC133 CL3 Low Profile 168-Pin Dimm 128MB6x位的PC133 CL3超薄168针DIMM
|
Kingston Technology ETC[ETC] List of Unclassifed Manufacturers
|
KVR133X64C3L256 KVR133X64C3L_256 KVR133X64C3L/256 |
256MB 16M x Bit PC133 CL3 Low Profile 168-Pin Dimm 256MB6米x位的PC133 CL3超薄168针DIMM 256MB 16M x Bit PC133 CL3 Low Profile 168-Pin Dimm 256MB6x位的PC133 CL3超薄168针DIMM
|
Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers ETC[ETC]
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KVR133X64C3L512 KVR133X64C3L_512 KVR133X64C3L/512 |
512MB 16M x Bit PC133 CL3 Low Profile 168-Pin Dimm 512MB6x位的PC133 CL3超薄168针DIMM
|
Kingston Technology ETC[ETC] List of Unclassifed Manufacturers
|
KVR133X64C3L64 KVR133X64C3L_64 KVR133X64C3L/64 |
64MB 8M x 64-BIT PC133 CL3 168-PIN DIMM Module
|
Kingston Technology ETC[ETC] List of Unclassifed Manufacturers Electronic Theatre Controls, Inc.
|
IS42S16800E-6BLI IS42S16800E-6TL IS42S81600E IS42S |
16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM
|
Integrated Silicon Solution, Inc
|
V437216S04VCTG-75 |
3.3 VOLT 16M x 72 HIGH PERFORMANCE PC133 UNBUFFERED ECC SDRAM MODULE 3.36米x 72高性能PC133的无缓冲ECC内存模块
|
Mosel Vitelic, Corp. Mosel Vitelic Corp
|
KVR400X64C3AK2/1G |
1024MB 400MHz DDR Non-ECC CL3 (3-3-3) DIMM (Kit of 2) 1024MB00MHz的复员非ECC CL3-3-3)内存(2盒)
|
Ecliptek, Corp.
|
HYB39S256160DCL-6 HYB39S256800DCL-6 HYB39S256800DC |
Polypropylene metallized tape wrap and epoxy filled - Snubber 256兆位同步DRAM 256 MBit Synchronous DRAM 256兆位同步DRAM 256M (16Mx16) PC133 3-3-3 256Mb (32Mx8) FBGA PC133 3-3-3 256Mb (16Mx16) FBGA PC133 3-3-3 256Mb (64Mx4) PC133 3-3-3 256Mb (64Mx4) FBGA PC133 3-3-3 256 MBit Synchronous DRAM
|
Infineon Technologies AG Infineon Technologies A...
|
HYB3165405AJ-40 HYB3164405AJ-40 HYB3164405AT-50 HY |
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32 16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32 16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 60 ns, PDSO32 16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
|
SIEMENS AG Infineon Technologies AG
|
MBM29LV017-12 MBM29LV017-90 MBM29LV017-90PBT MBM29 |
FLASH MEMORY 16M (2M x 8) BIT CMOS 16M (2M x 8) bit
|
Fujitsu Microelectronics
|
TC58128DC |
128M Bit (16M×8Bits ) CMOS NAND EEPROM(16M×8CMOS与非EEPROM)
|
Toshiba Corporation
|